august 2009 FCP16N60N / fcpf16n60nt n-channel mosfet ?2009 fairchild semiconductor corporation FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 1 supremos tm FCP16N60N / fcpf16n60nt n-channel mosfet 600v, 16a, 0.170 w features ? r ds(on) = 0.17 w ( typ.)@ v gs = 10v, i d = 8a ? ultra low gate charge ( typ. qg = 40.2nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchilds next generation of hi gh voltage super-junction mosfets, employs a deep trenc h filling process that differentiates it from preceding multi -epi based technologies. by utilizing this advanced technology and precise process control, supremos provides world class rsp, superior switching performance and ruggedness. this supremos mosfet fits the industrys ac-dc smps requirements for pfc, server/telecom power, fpd tv p ower, atx power, and industrial power applications. d g s to-220f fcpf series g s d g d s to-220 fcp series mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCP16N60N fcpf16n60nt units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 16.0 16.0* a -continuous (t c = 100 o c) 10.1 10.1* i dm drain current - pulsed (note 1) 48.0 48.0* a e as single pulsed avalanche energy (note 2) 355 m j i ar avalanche current 5.3 a e ar repetitive avalanche energy 1.34 mj dv/dt mosfet dv/dt ruggedness 100 v/ns peak diode recovery dv/dt (not e 3) 20 v/ns p d power dissipation (t c = 25 o c) 134.4 35.7 w - derate above 25 o c 1.08 0.29 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter FCP16N60N fcpf16n60nt units r q jc thermal resistance, junction to case 0.93 3.5 o c/w r q cs thermal resistance, case to heat sink (typical) 0.5 0. 5 r q ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperat ure
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quanti ty FCP16N60N FCP16N60N to-220 - - 50 fcpf16n60nt fcpf16n60nt to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v, t c = 25 o c 600 - - v d bv dss d t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.73 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 m a v ds = 480v, v gs = 0v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 m a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 8a - 0.170 0.199 w g fs forward transconductance v ds = 40v, i d = 8a - 13 - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 1630 2170 pf c oss output capacitance - 70 95 pf c rss reverse transfer capacitance - 5 10 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 40 60 pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 176 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 8a, v gs = 10v (note 4) - 40.2 52.3 nc q gs gate to source gate charge - 6.7 - nc q gd gate to drain miller charge - 12.9 - nc esr equivalent series resistance (g-s) drain open 2.9 w t d(on) turn-on delay time v dd = 380v, i d = 8a r g = 4.7 w (note 4) - 15.8 41.6 ns t r turn-on rise time - 15.5 41.0 ns t d(off) turn-off delay time - 60.3 130.6 ns t f turn-off fall time - 20.2 50.4 ns i s maximum continuous drain to source diode forward cu rrent - - 16 a i sm maximum pulsed drain to source diode forward curren t - - 48 a v sd drain to source diode forward voltage v gs = 0v, i sd = 8a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 8a di f /dt = 100a/ m s - 319 - ns q rr reverse recovery charge - 4.4 - m c notes: 1. repetitive rating: pulse width limited by maximu m junction temperature 2. i as = 5.3a, r g = 25 w , starting t j = 25 c 3. i sd 16a, di/dt 200a/ m s, v dd = 380v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 0.1 1 10 100 *notes: 1. 250 m mm m s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.0 v 4.5 v 4.0 v i d , drain current[a] v ds , drain-source voltage[v] 2 4 6 8 0.1 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 m mm m s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 10 20 30 40 50 0.1 0.2 0.3 0.4 0.5 0.6 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ w ww w ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 *notes: 1. v gs = 0v 2. 250 m mm m s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 0 2500 5000 7500 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 0 2 4 6 8 10 *notes: i d = 8a v ds = 120v v ds = 380v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area _ fcpf16n60nt figure 11. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 8a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 20 m mm m s 100 m mm m s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 1 10 100 1000 0.01 0.1 1 10 100 20 m mm m s 100 m mm m s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c ] _ FCP16N60N
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve _ FCP16N60N figure 13. transient thermal response curve _ fcpf16n60nt 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z q qq q jc (t) = 0.93 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z q qq q jc (t) 0.5 single pulse thermal response [ z q qq q jc ] rectangular pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 2 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z q qq q jc (t) = 3.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z q qq q jc (t) 0.5 single pulse thermal response [ z q qq q jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms d u t v d s + _ d r i v e r r g s a m e t y p e a s d u t v g s ? d v / d t c o n t r o l l e d b y r g ? i s d c o n t r o l l e d b y p u l s e p e r i o d v d d l i s d 1 0 v v g s ( d r i v e r ) i s d ( d u t ) v d s ( d u t ) v d d b o d y d i o d e f o r w a r d v o l t a g e d r o p v s d i f m , b o d y d i o d e f o r w a r d c u r r e n t b o d y d i o d e r e v e r s e c u r r e n t i r m b o d y d i o d e r e c o v e r y d v / d t d i / d t d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - d u t v d s + _ d r i v e r r g s a m e t y p e a s d u t v g s ? d v / d t c o n t r o l l e d b y r g ? i s d c o n t r o l l e d b y p u l s e p e r i o d v d d l l i s d 1 0 v v g s ( d r i v e r ) i s d ( d u t ) v d s ( d u t ) v d d b o d y d i o d e f o r w a r d v o l t a g e d r o p v s d i f m , b o d y d i o d e f o r w a r d c u r r e n t b o d y d i o d e r e v e r s e c u r r e n t i r m b o d y d i o d e r e c o v e r y d v / d t d i / d t d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - -
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 8 dimensions in millimeters mechanical dimensions to-220
FCP16N60N / fcpf16n60nt n-channel mosfet FCP16N60N / fcpf16n60nt rev. a1 www.fairchildsemi.com 9 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10
C0.05 dimensions in millimeters
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